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Tuning the performance of organic spintronic devices using x-ray generated traps
1Department of Physics and Astronomy, Optical Science and Technology Center, University of Iowa, Iowa City, 52242, USA.
Physical Review Letters
|September 26, 2012
Summary
X-rays from electron-beam deposition create traps in organic materials, decreasing spin length in spin valves but enhancing magnetoresistance in organic magnetoresistive (OMAR) devices.
Area of Science:
- Organic electronics
- Spintronics
- Materials science
Background:
- Electron-beam deposition is used for metallic electrodes in organic spintronic devices.
- X-rays generated during this process can alter device performance.
- Understanding these alterations is crucial for device optimization.
Purpose of the Study:
- To investigate the impact of X-rays on organic spintronic device performance.
- To characterize the nature of X-ray-induced defects.
- To analyze the contrasting effects on spin-diffusion length and magnetoresistance.
Main Methods:
- Fabrication of organic spintronic devices.
- Exposure to X-rays during electron-beam deposition.
- Measurement of spin-diffusion length in organic spin valves.
- Characterization of magnetoresistance in organic magnetoresistive (OMAR) devices.
Main Results:
- X-rays generate traps with activation energy of ≈0.5 eV in organic materials.
- These traps significantly reduce spin-diffusion length in organic spin valves.
- Conversely, traps enhance magnetoresistance in OMAR devices.
Conclusions:
- X-ray-induced traps have opposing effects on different organic spintronic device types.
- The findings highlight the sensitivity of organic spintronics to fabrication processes.
- Further research is needed to fully understand and control these phenomena within existing theoretical frameworks.
