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Related Concept Videos

Induced Electric Dipoles01:28

Induced Electric Dipoles

A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

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Related Experiment Video

Updated: May 18, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Active control of ferroelectric switching using defect-dipole engineering.

Daesu Lee1, Byung Chul Jeon, Seung Hyub Baek

  • 1IBS-Center for Functional Interfaces of Correlated Electron Systems and Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.

Advanced Materials (Deerfield Beach, Fla.)
|October 2, 2012
PubMed
Summary

Researchers achieved active control of ferroelectric material defect structures and polarization switching. This defect dipole functionality, based on dipolar interaction, enables novel applications like high-density data storage.

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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
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Last Updated: May 18, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
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Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
07:03

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Solid-State Chemistry

Background:

  • Ferroelectric materials are crucial for electronic devices.
  • Controlling defect structures is key to tailoring ferroelectric properties.
  • Existing methods often compromise ferroelectric performance.

Purpose of the Study:

  • To achieve active control of defect structures in ferroelectric materials.
  • To understand and utilize the role of defect dipoles in polarization switching.
  • To enable new ferroelectric applications without sacrificing material properties.

Main Methods:

  • Investigated dipolar interactions between defect dipoles and polarization.
  • Visualized the functionality of defect dipoles in controlling ferroelectric switching.
  • Employed techniques to actively manipulate defect structures.

Main Results:

  • Demonstrated active control over defect structures and polarization switching.
  • Ferroelectric properties were maintained during defect manipulation.
  • Established a clear link between defect dipole behavior and switching control.

Conclusions:

  • Active control of ferroelectric defect structures is feasible.
  • Defect dipoles can be leveraged to precisely control ferroelectric switching.
  • This approach lays the groundwork for advanced ferroelectric devices, including multilevel data storage.