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High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability
Yulian Cao1, Haiming Ji, Pengfei Xu
1Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Optics Letters
|October 3, 2012
Abstract:
We demonstrate high-brightness 1.3 μm tapered lasers with high temperature stability by using p-doped InAs/GaAs quantum dots (QDs) as the active region. It is found that the beam quality factor M(2) for the devices is almost unchanged as the light power and temperature increase. The almost constant M(2) results from the p-doped QD active region.
