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Mid-infrared HgTe/As2S3 field effect transistors and photodetectors
Emmanuel Lhuillier1, Sean Keuleyan, Pavlo Zolotavin
1James Franck Institute, The University of Chicago, IL 60637, USA.
Advanced Materials (Deerfield Beach, Fla.)
|October 3, 2012
Abstract:
HgTe colloidal quantum dots (CQD) in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.
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