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170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.
E Rouvalis1, M Chtioui, F van Dijk
1Department of Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, UK. e.rouvalis@ucl.ac.uk
Optics Express
|October 6, 2012
Summary
We fabricated high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) for seamless integration with photonic devices. These UTC-PDs achieve 170 GHz bandwidth, enabling advanced optical communications and millimeter-wave applications.
Area of Science:
- Photonics and Optoelectronics
- Materials Science for Integrated Circuits
Background:
- High-bandwidth photodetectors are crucial for next-generation optical communication systems.
- Integrating diverse photonic components monolithically presents significant fabrication challenges.
Purpose of the Study:
- To demonstrate the fabrication of extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs).
- To enable monolithic integration of UTC-PDs with Multiple Quantum Well (MQW) photonic devices.
- To advance Photonic Integrated Circuits (PICs) for high-speed applications.
Main Methods:
- Utilizing fabrication techniques compatible with active-passive monolithic integration.
- Developing advanced Multiple Quantum Well (MQW) structures for enhanced photodiode performance.
Main Results:
- Achieved a responsivity of 0.27 A/W.
- Demonstrated a 3-dB bandwidth of 170 GHz.
- Obtained an output power of -9 dBm at 200 GHz.
Conclusions:
- The developed UTC-PDs offer extremely high bandwidth suitable for monolithic integration.
- This advancement is expected to facilitate the development of high-performance PICs.
- The technology holds promise for future optical communication and millimeter-wave systems.
