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Updated: May 18, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures.

Oscar Gustafsson¹, Amir Karim, Jesper Berggren

¹KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden. ogus@kth.se

|October 6, 2012

Summary

This summary is machine-generated.

Indium antimonide (InSb)-based quantum dots show promise for long-wavelength infrared (LWIR) photon detection. These structures exhibit photoluminescence and photoresponse suitable for LWIR applications.

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Area of Science:

Materials Science
Optoelectronics
Quantum Dot Technology

Background:

Quantum dots are crucial for advanced optoelectronic devices.
Long-wavelength infrared (LWIR) detection is vital for various applications.
Indium antimonide (InSb) offers unique electronic and optical properties.

Purpose of the Study:

To investigate InSb-based quantum dots for photon detection.
To explore their suitability for the long-wavelength infrared (LWIR) spectrum.
To analyze interband transitions in p-i-n photodiodes.

Main Methods:

Growth of InSb-based quantum dots using metal-organic vapor-phase epitaxy (MOVPE).
Fabrication of p-i-n photodiodes incorporating the quantum dots.
Characterization using photoluminescence and photoresponse measurements at 80 K.

Main Results:

Demonstrated LWIR photoluminescence with peak emission at 8.5 µm.
Measured photoresponse up to 6 µm, attributed to type-II interband transitions.
Operated at cryogenic temperatures (80 K).

Conclusions:

InSb-based quantum dot structures are viable for photon detection.
The study highlights potential for LWIR (8-12 µm) applications.
Type-II transitions are key to the observed photoresponse.