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Updated: May 18, 2026
12:57
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures
Oscar Gustafsson1, Amir Karim, Jesper Berggren
1KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden. ogus@kth.se
Optics Express
|October 6, 2012
Summary
Indium antimonide (InSb)-based quantum dots show promise for long-wavelength infrared (LWIR) photon detection. These structures exhibit photoluminescence and photoresponse suitable for LWIR applications.
Area of Science:
- Materials Science
- Optoelectronics
- Quantum Dot Technology
Background:
- Quantum dots are crucial for advanced optoelectronic devices.
- Long-wavelength infrared (LWIR) detection is vital for various applications.
- Indium antimonide (InSb) offers unique electronic and optical properties.
Purpose of the Study:
- To investigate InSb-based quantum dots for photon detection.
- To explore their suitability for the long-wavelength infrared (LWIR) spectrum.
- To analyze interband transitions in p-i-n photodiodes.
Main Methods:
- Growth of InSb-based quantum dots using metal-organic vapor-phase epitaxy (MOVPE).
- Fabrication of p-i-n photodiodes incorporating the quantum dots.
- Characterization using photoluminescence and photoresponse measurements at 80 K.
Main Results:
- Demonstrated LWIR photoluminescence with peak emission at 8.5 µm.
- Measured photoresponse up to 6 µm, attributed to type-II interband transitions.
- Operated at cryogenic temperatures (80 K).
Conclusions:
- InSb-based quantum dot structures are viable for photon detection.
- The study highlights potential for LWIR (8-12 µm) applications.
- Type-II transitions are key to the observed photoresponse.
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