Related Experiment Video
Updated: May 18, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Conditions for admittance-matched tunneling through symmetric metal-dielectric stacks
1ECE Department, University of Alberta, 9107-116 St. NW, Edmonton, Alberts, Canada. rdecorby@ualberta.ca
Abstract:
We used the theory of potential transmittance to derive a general expression for reflection-less tunneling through a periodic stack with a dielectric-metal-dielectric unit cell. For normal-incidence from air, the theory shows that only a specific (and typically impractically large) dielectric index can enable a perfect admittance match. For off-normal incidence of TE-polarized light, an admittance match is possible at a specific angle that depends on the index of the ambient and dielectric media and the thickness and index of the metal. For TM-polarized light, admittance matching is possible within the evanescent-wave range (i.e. for tunneling mediated by surface plasmons). The results provide insight for research on transparent metals and superlenses.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Magnetostatic Boundary Conditions
Standing Waves in a Cavity
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Schottky Barrier Diode

