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Single-mode GaN nanowire lasers.

Qiming Li1, Jeremy B Wright, Weng W Chow

  • 1Sandia National Laboratories, Albuquerque, New Mexico 87185-1086, USA.

Optics Express
|October 6, 2012
PubMed
Summary
This summary is machine-generated.

We achieved stable, single-frequency laser output from individual gallium nitride (GaN) nanowires. These nanowire lasers operate efficiently above threshold, demonstrating precise fabrication for advanced photonic applications.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Gallium nitride (GaN) nanowires are promising for optoelectronic devices.
  • Achieving stable, single-frequency lasing in nanowire structures remains a challenge.

Purpose of the Study:

  • To demonstrate stable, single-frequency lasing from individual GaN nanowire lasers.
  • To investigate the fabrication and performance of these nanowire lasers.

Main Methods:

  • Fabrication of GaN nanowires using a top-down technique involving tunable dry etch and anisotropic wet etch.
  • Characterization of laser output, including linewidth and side-mode suppression ratio.
  • Numerical simulations to understand lasing mechanisms.

Main Results:

  • Stable, single-frequency output achieved from as-fabricated GaN nanowire lasers.
  • Linewidth of approximately 0.12 nm and side-mode suppression ratio greater than 18 dB.
  • Numerical simulations confirmed strong mode competition and narrow gain bandwidth contribute to single-mode lasing.

Conclusions:

  • GaN nanowires can function as efficient, single-frequency lasers.
  • Precise control over nanowire dimensions is crucial for high-performance lasing.
  • The demonstrated technique offers a pathway for developing advanced nanowire-based photonic devices.