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Updated: May 17, 2026

A Method to Manipulate Surface Tension of a Liquid Metal via Surface Oxidation and Reduction
Published on: January 26, 2016
Electronic effects on the melting of small gallium clusters
K G Steenbergen1, D Schebarchov, N Gaston
1Victoria University of Wellington, School of Chemical and Physical Sciences, P.O. Box 600, Wellington 6140, New Zealand.
Abstract:
Motivated by experimental reports of higher-than-bulk melting temperatures in small gallium clusters, we perform first-principles molecular dynamics simulations of Ga(20) and Ga(20)(+) using parallel tempering in the microcanonical ensemble. The respective specific heat (C(V)) curves, obtained using the multiple histogram method, exhibit a broad peak centered at approximately 740 and 610 K--well above the melting temperature of bulk gallium (303 K) and in reasonable agreement with experimental data for Ga(20)(+). Assessment of atomic mobility confirms the transition from solid-like to liquid-like states near the C(V) peak temperature. Parallel tempering molecular dynamics simulations yield low-energy isomers that are ~0.1 eV lower in energy than previously reported ground state structures, indicative of an energy landscape with multiple, competing low-energy morphologies. Electronic structure analysis shows no evidence of covalent bonding, yet both the neutral and charged clusters exhibit greater-than-bulk melting temperatures.
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