Colloidal atomic layer deposition (c-ALD) using self-limiting reactions at nanocrystal surface coupled to phase...

Atomic layer deposition (ALD) is widely used for gas-phase deposition of high-quality dielectric, semiconducting, or metallic films on various substrates. In this contribution we propose the concept of colloidal ALD (c-ALD) for synthesis of colloidal nanostructures. During the c-ALD process, either nanoparticles or molecular precursors are sequentially transferred between polar and nonpolar phases to prevent accumulation of unreacted precursors and byproducts in the reaction mixture. We show that binding of inorganic ligands (e.g., S(2-)) to the nanocrystal surface can be used as a half-reaction in c-ALD process. The utility of this approach has been demonstrated by growing CdS layers on colloidal CdSe nanocrystals, nanoplatelets, and CdS nanorods. The CdS/CdSe/CdS nanoplatelets represent a new example of colloidal nanoheterostructures with mixed confinement regimes for electrons and holes. In these materials holes are confined to a thin (∼1.8 nm) two-dimensional CdSe quantum well, while the electron confinement can be gradually relaxed in all three dimensions by growing epitaxial CdS layers on both sides of the quantum well. The relaxation of the electron confinement energy caused a shift of the emission band from 510 to 665 nm with unusually small inhomogeneous broadening of the emission spectra.