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Related Experiment Video

Updated: May 17, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Electrically tailored resistance switching in silicon oxide.

Adnan Mehonic¹, Sébastien Cueff, Maciej Wojdak

¹Department of Electronic and Electrical Engineering, UCL, London, UK. a.mehonic@ee.ucl.ac.uk

|October 16, 2012

Summary

Metal-free silicon dioxide thin films show promising resistive switching capabilities, offering multi-level and analogue resistance modulation. These silicon-based resistive RAM (ReRAM) devices enable enhanced integration without leakage current issues.

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Existing metal oxide-based resistive RAM (ReRAM) devices face fabrication challenges and performance limitations.
Metal-free alternatives are sought for improved ReRAM technology.

Purpose of the Study:

To investigate resistive switching in non-stoichiometric silicon-rich silicon dioxide thin films.
To explore multi-level switching, analogue modulation, nonlinearity, and self-rectification in these devices.

Main Methods:

Fabrication of silicon-rich silicon dioxide thin films.
Characterization of resistive switching properties.
Scanning tunnelling microscopy (STM) for filament analysis.

Main Results:

Demonstrated multi-level and analogue resistance modulation.
Achieved nonlinearity and self-rectification for enhanced device integration.
Identified conductive filaments using STM, revealing their location and dimensions.

Conclusions:

Metal-free silicon-based ReRAM offers a viable alternative to metal oxide devices.
The demonstrated properties are crucial for high-density passive crossbar array integration.
Understanding conduction and switching mechanisms is key for future device optimization.