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LSPR enhanced MSM UV photodetectors
Serkan Butun1, Neval A Cinel, Ekmel Ozbay
1Nanotechnology Research Center, Bilkent University, Bilkent, Ankara, Turkey. butun@bilkent.edu.tr
Nanotechnology
|October 20, 2012
Summary
Aluminum nanoparticles enhance UV photodetector performance. Researchers achieved a 1.5x responsivity increase in gallium nitride (GaN) devices by using 36 nm aluminum nanoparticles for plasmonic resonance, boosting light absorption.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Gallium nitride (GaN) is a key material for optoelectronic devices.
- Enhancing light absorption in GaN is crucial for improving photodetector performance.
- Localized surface plasmon resonance (LSPR) offers a pathway to enhance light absorption.
Purpose of the Study:
- To fabricate and characterize LSPR-enhanced UV photodetectors on semi-insulating GaN.
- To investigate the effect of aluminum (Al) nanoparticles on UV light absorption in GaN.
- To quantify the enhancement in photodetector responsivity due to plasmonic effects.
Main Methods:
- Fabrication of semi-insulating GaN substrates using Metal-Organic Chemical Vapor Deposition (MOCVD).
- Deposition of 36 nm diameter Al nanoparticles to achieve plasmonic resonance in the UV region.
- Spectral transmission measurements to determine nanoparticle extinction spectra.
- Spectral responsivity measurements of the fabricated photodetectors.
Main Results:
- Al nanoparticles exhibited a resonant extinction peak around 300 nm.
- Enhanced absorption in GaN was observed at 340 nm due to the Al nanoparticles.
- A significant enhancement factor of 1.5 in spectral responsivity was achieved.
Conclusions:
- The study experimentally verified the field enhancement capabilities of Al nanoparticles on GaN.
- LSPR using Al nanoparticles is an effective strategy for enhancing UV photodetector performance.
- This approach holds promise for developing more sensitive UV detection technologies.
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