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Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Correlation between In content and emission wavelength of In(x)Ga(1-x)N/GaN nanowire heterostructures

M Wölz1, J Lähnemann, O Brandt

  • 1Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.

Nanotechnology
|October 23, 2012
PubMed

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