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Updated: May 17, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Impurity and edge roughness scattering in graphene nanoribbons: the Boltzmann approach
1Condensed Matter Physics Laboratory, Heinrich-Heine-Universität, Universitätsstraße 1, D-40225 Düsseldorf, Germany. hengyi.xu@hhu.de
Abstract:
The conductivity of graphene nanoribbons in the presence of bulk impurities and edge roughness is studied theoretically using the Boltzmann transport equation for quasi-one-dimensional systems. As the number of occupied subbands increases, the conductivity due to bulk impurities converges towards the two-dimensional case. It is shown that the dependence of the conductivity generated by edge roughness scattering depends in a distinctly different way on the sample parameters than the conductivity due to bulk scattering. The Boltzmann model furthermore predicts the amplitude of the edge-roughness-induced magnetoconductance dip as a function of the amplitude and the correlation length of the edge roughness.
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