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Updated: May 17, 2026

Grafting Multiwalled Carbon Nanotubes with Polystyrene to Enable Self-Assembly and Anisotropic Patchiness
Published on: April 1, 2018
High-density integration of carbon nanotubes via chemical self-assembly
Hongsik Park1, Ali Afzali, Shu-Jen Han
1IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA. hpark@us.ibm.com
Abstract:
Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we show that ion-exchange chemistry can be used to fabricate arrays of individually positioned carbon nanotubes with a density as high as 1 × 10(9) cm(-2)-two orders of magnitude higher than previous reports. With this approach, we assembled a high density of carbon-nanotube transistors in a conventional semiconductor fabrication line and then electrically tested more than 10,000 devices in a single chip. The ability to characterize such large distributions of nanotube devices is crucial for analysing transistor performance, yield and semiconducting nanotube purity.

