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Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
Juqing Liu1, Zongyou Yin, Xiehong Cao
1School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Advanced Materials (Deerfield Beach, Fla.)
|October 31, 2012
Abstract:
A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.
