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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

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Published on: June 23, 2018

Electroded avalanche amorphous selenium (a-Se) photosensor.

Oleksandr Bubon¹, Giovanni Decrescenzo, Wei Zhao

¹Physics Department, Lakehead University, Thunder Bay, Ontario, Canada ; Thunder Bay Regional Research Institute, Thunder Bay, Ontario, Canada.

Current Applied Physics : the Official Journal of the Korean Physical Society

|November 2, 2012

Summary

This summary is machine-generated.

Optimized resistive interface layers (RIL) enable avalanche amorphous selenium (a-Se) photoconductors for solid-state imaging. This breakthrough overcomes previous limitations, achieving maximum theoretical gain for practical applications.

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Area of Science:

Materials Science
Solid-State Physics
Photoconductor Technology

Background:

Avalanche amorphous selenium (a-Se) is a promising photoconductor but limited to vacuum electron-beam readout (HARP).
Solid-state medical imaging requires electronic readout, posing challenges due to high electric fields and dielectric breakdown.
Previous attempts using Resistive Interface Layers (RIL) sacrificed transport properties.

Purpose of the Study:

To optimize RIL deposition for improved avalanche a-Se photoconductors.
To achieve high gain and excellent transport properties in solid-state imaging devices.
To enable practical implementation of a-Se based solid-state image sensors.

Main Methods:

Optimized Resistive Interface Layer (RIL) deposition technique.
Detailed analysis of transport properties using Time-of-Flight (TOF) technique.
Characterization of electroded avalanche a-Se structures.

Main Results:

Achieved stable gain of 200 at 104 V/μm for a 15-μm thick a-Se layer.
Reached maximum theoretical gain for the specified a-Se thickness.
Demonstrated superior transport properties and time performance compared to previous a-Se structures.

Conclusions:

Optimized RIL deposition is crucial for high-performance avalanche a-Se.
This advancement overcomes previous limitations in a-Se photoconductors.
Resistive Interface Layers are an enabling technology for solid-state avalanche a-Se image sensors.