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Updated: May 17, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
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Absolute determination of charge-coupled device quantum detection efficiency using Si K-edge x-ray absorption fine

J Dunn1, A B Steel

  • 1Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94550, USA. dunn6@llnl.gov

The Review of Scientific Instruments
|November 7, 2012
PubMed
Summary

This study introduces a novel method to precisely determine the quantum detection efficiency and layer thicknesses in front-illuminated charge-coupled devices (CCDs). This technique enhances X-ray spectroscopy accuracy for laser-produced plasma research.

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