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Updated: May 17, 2026

Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
Published on: June 9, 2023
Effect of redox proteins on the behavior of non-volatile memory
Ji Hyun Lee1, Seung Chul Yew, Jinhan Cho
1Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul, 151-744, Republic of Korea.
Abstract:
We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (~11 V) and relatively good endurance properties (~over 100 cycles).
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