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Related Experiment Video

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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
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Symmetry quantification and mapping using convergent beam electron diffraction.

Kyou-Hyun Kim1, Jian-Min Zuo

  • 1Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.

Ultramicroscopy
|November 13, 2012
PubMed
Summary
This summary is machine-generated.

We developed an automated algorithm to measure symmetry in convergent beam electron diffraction (CBED) patterns. The normalized cross-correlation coefficient effectively quantifies symmetry, even in materials with defects.

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Area of Science:

  • Materials Science
  • Crystallography
  • Electron Microscopy

Background:

  • Convergent beam electron diffraction (CBED) is a powerful technique for determining crystal structure and symmetry.
  • Quantifying symmetry in experimental CBED patterns can be challenging due to experimental imperfections.
  • Automated methods are needed for efficient and reliable symmetry analysis in materials science.

Purpose of the Study:

  • To develop and validate a new algorithm for quantifying symmetry in CBED patterns.
  • To evaluate the effectiveness of profile R-factor (R(p)) and normalized cross-correlation coefficient (γ) for symmetry quantification.
  • To demonstrate the application of the algorithm for symmetry mapping in materials.

Main Methods:

  • Development of an automated algorithm implemented as a Digital Micrograph (DM) script.
  • Evaluation of symmetry quantification metrics (R(p) and γ) using experimental and simulated CBED patterns from silicon.
  • Calibration of the algorithm using a silicon single crystal.
  • Application of the algorithm to a silicon sample containing defects to assess sensitivity.

Main Results:

  • The normalized cross-correlation coefficient (γ) was found to be an effective and robust metric for quantifying symmetry in CBED patterns.
  • The automated algorithm successfully quantified symmetry in both ideal and defective silicon samples.
  • The sensitivity of the symmetry quantification to defects was demonstrated.

Conclusions:

  • The proposed automated algorithm provides a reliable method for quantifying symmetry in CBED patterns.
  • The normalized cross-correlation coefficient is a suitable measure for assessing symmetry in experimental CBED data.
  • This technique has potential applications in materials characterization and defect analysis using CBED.