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Updated: May 17, 2026

Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics
Published on: August 5, 2020
Acoustically coupled thickness-mode AIN-on-Si band-pass filters--part I: principle and devices
Wanling Pan1, Vikram A Thakar, Mina Rais-Zadeh
1Georgia Institute of Technology, Atlanta, GA, USA.
Abstract:
In this, the first of two papers, we present the working principle and the implementation of laterally acoustically coupled thickness-mode thin-film piezoelectric-on-substrate (TPoS) filters. This type of filter offers low insertion loss and small bandwidth in a broad frequency range--from a few hundred megahertz up to a few gigahertz--and occupy a small chip area. In this paper, we discuss several design concerns, including the choice of materials for TPoS filters. We demonstrate a design for an air-suspended AlN-on-Si filter, which offers a low insertion loss of 2.4 dB at 2.877 GHz. The bandwidth of this filter is 12 MHz with a return loss of better than 30 dB. In Part II of this paper, we present a comprehensive analysis of the effect of physical layout parameters on the frequency response of TPoS filters.
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