Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Carrier Transport

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Disentangling Orbital and Confinement Contributions to <i>g</i>-Factor in Ge/SiGe Hole Quantum Dots.

Nano letters·2026

Same author

Radio-Frequency Charge Detection on Graphene Electron-Hole Double Quantum Dots.

Nano letters·2025

Same author

Entropy Spectroscopy of a Bilayer Graphene Quantum Dot.

Physical review letters·2025

Same author

Electric-Field-Tunable Spin-Orbit Gap in a Bilayer Graphene/WSe<sub>2</sub> Quantum Dot.

Nano letters·2025

Same author

Coherent charge oscillations in a bilayer graphene double quantum dot.

Nature communications·2023

Same author

Particle-hole symmetry protects spin-valley blockade in graphene quantum dots.

Nature·2023

Same journal

Rashba-like spin splitting in inversion symmetric plasmonic metasurface.

Reports on progress in physics. Physical Society (Great Britain)·2026

Same journal

Classification and correlation signatures of chiral spin liquids on the pyrochlore lattice.

Reports on progress in physics. Physical Society (Great Britain)·2026

Same journal

Physical sampling for computational photography.

Reports on progress in physics. Physical Society (Great Britain)·2026

Same journal

A comprehensive review on master stability functions in complex network dynamics.

Reports on progress in physics. Physical Society (Great Britain)·2026

Same journal

Switchable band alignment in 2D-perovskite/WS<sub>2</sub>heterostructures for tunable exciton transport and valley polarization.

Reports on progress in physics. Physical Society (Great Britain)·2026

Same journal

Chiral graviton modes in fermionic Fractional Chern Insulators.

Reports on progress in physics. Physical Society (Great Britain)·2026

See all related articles

Search research articles

Related Experiment Video

Updated: May 17, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Transport through graphene quantum dots.

J Güttinger¹, F Molitor, C Stampfer

¹Solid State Physics Laboratory, ETH Zurich, 8092 Zurich, Switzerland. guettinj@phys.ethz.ch

Reports on Progress in Physics. Physical Society (Great Britain)

|November 13, 2012

Summary

This summary is machine-generated.

Transport experiments on graphene quantum dots reveal quantum confinement effects. Researchers observed Coulomb blockade and Zeeman spin splitting, demonstrating graphene

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Using Graphene Liquid Cell Transmission Electron Microscopy to Study in Situ Nanocrystal Etching

Using Graphene Liquid Cell Transmission Electron Microscopy to Study in Situ Nanocrystal Etching

Published on: May 17, 2018

Related Experiment Videos

Last Updated: May 17, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Using Graphene Liquid Cell Transmission Electron Microscopy to Study in Situ Nanocrystal Etching

Using Graphene Liquid Cell Transmission Electron Microscopy to Study in Situ Nanocrystal Etching

Published on: May 17, 2018

Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Graphene, a 2D carbon allotrope, possesses unique electronic properties suitable for quantum studies.
Graphene quantum dots (GQDs) offer controlled environments for investigating quantum phenomena.
Weak spin-orbit interaction in graphene is advantageous for preserving electron spin coherence.

Purpose of the Study:

To review transport experiments on graphene quantum dots and narrow graphene constrictions.
To investigate electron confinement and quantum phenomena in GQDs.
To explore the influence of magnetic fields on GQD electronic properties.

Main Methods:

Fabrication of GQDs by etching monolayer graphene flakes into small islands.
Transport spectroscopy using narrow graphene constrictions as tunneling barriers.
Measurements in perpendicular and parallel magnetic fields to probe electronic states.

Main Results:

Observation of electron confinement via Coulomb blockade and excited state transport in GQDs.
Identification of the electron-hole transition and the zero-energy Landau level in magnetic fields.
Measurement of Zeeman spin splitting (g ≈ 2) and observation of spin state filling influenced by exchange interactions.

Conclusions:

Graphene quantum dots exhibit clear signatures of quantum confinement.
Magnetic field studies reveal characteristic graphene electronic behaviors and spin properties.
Graphene is a promising platform for exploring electron spin dynamics and quantum information processing.