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Updated: May 16, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Memory devices using a mixture of MoS₂ and graphene oxide as the active layer
Zongyou Yin1, Zhiyuan Zeng, Juqing Liu
1School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Abstract:
A mixed film consisting of 2D MoS₂ and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS₂ component in the MoS₂-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS₂-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤ 1.5 V) and high ON/OFF current ratio (≈ 10²).
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