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Passively mode-locked Yb3+:Sc2SiO5 thin-disk laser.

Katrin Sarah Wentsch1, Lihe Zheng, Jun Xu

  • 1Graduate School of Excellence, University of Stuttgart, Nobelstrasse 12, Stuttgart 70569, Germany. Katrin.Wentsch@ifsw.uni‑stuttgart.de

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|November 21, 2012
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Summary
This summary is machine-generated.

This study demonstrates a passively mode-locked Yb:SSO thin-disk laser achieving high average output power. The results highlight Ytterbium-doped Scandium Orthosilicate as a promising material for advanced laser applications.

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Area of Science:

  • Laser Physics
  • Materials Science

Background:

  • Passively mode-locked lasers are crucial for generating ultrashort optical pulses.
  • Thin-disk laser architectures offer excellent thermal management for high-power operation.
  • Yb:SSO is an emerging gain medium with potential for high-power ultrashort pulse generation.

Purpose of the Study:

  • To experimentally investigate the performance of a passively mode-locked Yb:SSO thin-disk laser.
  • To assess the suitability of Yb:SSO for high-power ultrashort pulse generation in a thin-disk configuration.

Main Methods:

  • Utilized a commercially available semiconductor saturable absorber mirror for mode-locking.
  • Operated the Yb:SSO thin-disk laser at a repetition rate of 27 MHz.
  • Characterized output power, pulse duration, spectrum, and beam quality.

Main Results:

  • Achieved a maximum average output power of 27.8 W.
  • Generated pulses with a duration of 298 fs centered at 1036 nm.
  • Measured a beam quality close to diffraction-limited (M(2)<1.1).

Conclusions:

  • Yb:SSO is well-suited for passively mode-locked thin-disk laser oscillators.
  • Further optimization of crystal quality and doping levels can enable greater power scaling.
  • Yb:SSO warrants further investigation for advanced laser applications.