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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Point defect engineering strategies to retard phosphorous diffusion in germanium

H A Tahini1, A Chroneos, R W Grimes

  • 1Department of Materials, Imperial College London, London SW7 2AZ, UK. hassan.tahini09@imperial.ac.uk

Physical Chemistry Chemical Physics : PCCP
|November 22, 2012
PubMed

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