Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

Imperfections in Crystal Structure: Stoichiometric Point Defects

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Crossover in atomic mobility underlying the glass transition in inorganic glasses.

Journal of physics. Condensed matter : an Institute of Physics journal·2024

Same author

DFT insights into the electronic structure, mechanical behaviour, lattice dynamics and defect processes in the first Sc-based MAX phase Sc<sub>2</sub>SnC.

Scientific reports·2022

Same author

Chemically stable new MAX phase V<sub>2</sub>SnC: a damage and radiation tolerant TBC material.

RSC advances·2022

Same author

First principles calculations of the structural, electronic, magnetic, and thermodynamic properties of the Nd<sub>2</sub>MgGe<sub>2</sub> and Gd<sub>2</sub>MgGe<sub>2</sub> intermetallic compounds.

Scientific reports·2021

Same author

A high-entropy manganite in an ordered nanocomposite for long-term application in solid oxide cells.

Nature communications·2021

Same author

Effects of Al substitution by Si in Ti<sub>3</sub>AlC<sub>2</sub> nanolaminate.

Scientific reports·2021

Search research articles

Related Experiment Video

Updated: May 16, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Point defect engineering strategies to retard phosphorous diffusion in germanium.

H A Tahini¹, A Chroneos, R W Grimes

¹Department of Materials, Imperial College London, London SW7 2AZ, UK. hassan.tahini09@imperial.ac.uk

Physical Chemistry Chemical Physics : PCCP

|November 22, 2012

Summary

Phosphorous diffusion in germanium is rapid. Codoping with tin and hafnium, particularly hafnium, effectively reduces phosphorous migration by increasing energy barriers, aiding technological applications.

More Related Videos

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Published on: January 4, 2016

Developing High Performance GaP/Si Heterojunction Solar Cells

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Related Experiment Videos

Last Updated: May 16, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Published on: January 4, 2016

Developing High Performance GaP/Si Heterojunction Solar Cells

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Area of Science:

Materials Science
Solid-State Physics
Computational Materials Science

Background:

Phosphorous diffusion in germanium (Ge) is notably fast, posing challenges for semiconductor device fabrication and performance.
Point defect engineering is crucial for controlling impurity diffusion and enabling technological applications.

Purpose of the Study:

To investigate the impact of isovalent codopants, specifically tin (Sn) and hafnium (Hf), on phosphorous (P) migration in germanium.
To explore the mechanisms of vacancy-mediated diffusion and the role of codopants in altering migration energy barriers.

Main Methods:

Utilizing Density Functional Theory (DFT) calculations.
Employing hybrid Density Functional calculations for enhanced accuracy.
Simulating vacancy-mediated diffusion pathways for phosphorous in germanium.

Main Results:

The migration energy barriers for phosphorous in germanium are significantly increased by the presence of oversized isovalent codopants like tin and hafnium.
Oversized codopants effectively hinder the movement of phosphorous atoms through vacancy-mediated diffusion.

Conclusions:

Tin and hafnium codoping are proposed as effective point defect engineering strategies to retard phosphorous migration in germanium.
Hafnium codoping shows particular promise in significantly reducing phosphorous diffusion rates for advanced germanium-based technologies.