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Updated: May 16, 2026

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Light-hole quantization in the optical response of ultra-wide GaAs/Al(x)Ga(1-x)As quantum wells
V V Solovyev1, V A Bunakov, S Schmult
1Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia. vicsol@issp.ac.ru
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|November 27, 2012
Abstract:
Temperature-dependent reflectivity and photoluminescence spectra are studied for undoped ultra-wide 150 and 250 nm GaAs quantum wells. It is shown that spectral features previously attributed to a size quantization of the exciton motion in the z-direction coincide well with energies of quantized levels for light holes. Furthermore, optical spectra reveal very similar properties at temperatures above the exciton dissociation point.

