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Related Experiment Video

Updated: May 16, 2026

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Multiwatt long wavelength quantum cascade lasers based on high strain composition with 70% injection efficiency.

Arkadiy Lyakh1, Richard Maulini, Alexei Tsekoun

  • 1Pranalytica, Inc, 1101 Colorado Ave., Santa Monica, California 90401, USA.

Optics Express
|November 29, 2012
PubMed
Summary

High-power AlInAs/InGaAs/InP quantum cascade lasers emitting near 9 µm were developed. These lasers achieved significant room-temperature optical power and high wallplug efficiency, validated by a rate equation model.

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Area of Science:

  • Semiconductor Physics
  • Optoelectronics
  • Quantum Engineering

Background:

  • Quantum cascade lasers (QCLs) are crucial for mid-infrared applications.
  • AlInAs/InGaAs/InP material systems offer potential for high-performance QCLs.
  • Strain-balanced heterostructures are key for device stability and performance.

Purpose of the Study:

  • To design and grow a strain-balanced AlInAs/InGaAs/InP quantum cascade laser.
  • To achieve light emission near 9 µm for specific applications.
  • To characterize the laser performance at room temperature.

Main Methods:

  • Molecular beam epitaxy (MBE) for material growth.
  • Buried heterostructure processing for device fabrication.
  • Rate equation modeling for performance analysis.

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Main Results:

  • Demonstrated maximum pulsed and continuous wave (CW) room-temperature optical power of 4.5 W and 2 W, respectively.
  • Achieved peak wallplug efficiencies of 16% (pulsed) and 10% (CW).
  • Validated pulsed laser characteristics using a rate equation model with 70% injection efficiency.

Conclusions:

  • The developed AlInAs/InGaAs/InP QCL structure shows excellent performance.
  • The device is suitable for high-power mid-infrared applications.
  • The rate equation model accurately describes the pulsed laser performance.