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Updated: May 16, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
Published on: November 16, 2018
Photoluminescence efficiency droop and stimulated recombination in GaN epilayers
Jūras Mickevičius1, Jonas Jurkevičius, Michael S Shur
1Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Lithuania, Saulėtekio al. 9 – III, Vilnius, LT-10222, Lithuania. juras.mickevicius@ff.vu.lt
Abstract:
The photoluminescence droop effect, i.e., the decrease in emission efficiency with increasing excitation intensity, is observed and studied in GaN epilayers with different carrier lifetimes. Spontaneous and stimulated emissions have been studied in the front-face and edge emission configurations. The onset of stimulated recombination occurs simultaneously with the droop onset in the front-face configuration and might be considered as an origin of the droop effect in GaN epilayers.
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