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Related Experiment Video

Updated: May 16, 2026

Photoelectron Imaging of Anions Illustrated by 310 Nm Detachment of F−
06:53

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Published on: July 27, 2018

Nitrogen ion implanted InP based photo-switch.

Chris Graham1, Russell Gwilliam, Alwyn Seeds

  • 1Department of Electronic and Electrical Engineering, University College London, London, UK.

Optics Express
|November 29, 2012
PubMed
Summary
This summary is machine-generated.

This study presents a novel Indium Phosphide device operating at 15 GHz microwave frequencies. High energy nitrogen ion implantation enables picosecond photocarrier recombination, reducing power needs for device switching.

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Area of Science:

  • Optoelectronics
  • Semiconductor Device Physics
  • Materials Science

Background:

  • Indium Phosphide (InP) based devices are crucial for high-frequency applications.
  • Photocarrier dynamics significantly impact device performance and switching speeds.
  • Controlling defect levels is key to optimizing optoelectronic device characteristics.

Purpose of the Study:

  • To design and fabricate an Indium Phosphide-based device for microwave frequencies.
  • To investigate the effect of nitrogen ion implantation on photocarrier recombination time.
  • To enhance photocurrent mobility and reduce switching power requirements.

Main Methods:

  • Device fabrication using Indium Phosphide.
  • High energy nitrogen ion implantation to create EL-2 trapping levels.
  • Characterization of photocarrier recombination time and photocurrent mobility.

Main Results:

  • The fabricated device operates at microwave frequencies up to 15 GHz.
  • Nitrogen ion implantation resulted in a photocarrier recombination time of a few picoseconds.
  • Achieved high photocurrent mobility due to uniform bulk point defects, reducing switching power.

Conclusions:

  • The developed Indium Phosphide device demonstrates high-frequency operation.
  • Nitrogen ion implantation is an effective method for fast photocarrier dynamics.
  • This approach offers a pathway to more efficient high-speed optoelectronic switching devices.