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Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

Y C Yang1, Jinn-Kong Sheu, Ming-Lun Lee

  • 1Department of Photonics, National Cheng Kung University, Tainan City 70101, Taiwan.

Optics Express
|November 29, 2012
PubMed
Summary
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This study introduces efficient vertical Indium Gallium Nitride (InGaN) light-emitting diodes (LEDs) fabricated using novel thinning and etching techniques. These vertical LEDs demonstrate superior light output power and reduced degradation compared to conventional lateral LEDs.

Area of Science:

  • Optoelectronics
  • Materials Science
  • Semiconductor Devices

Background:

  • Conventional lateral Gallium Nitride (GaN) light-emitting diodes (LEDs) face limitations in light extraction and thermal management.
  • Patterned sapphire substrates (PSS) are used to improve light extraction efficiency by mitigating light-guiding effects.

Purpose of the Study:

  • To develop an efficient vertical InGaN LED structure.
  • To enhance light output power and thermal performance compared to lateral LEDs.

Main Methods:

  • Fabrication of vertical LEDs using patterned sapphire substrates (PSS) and substrate thinning techniques.
  • Selective dry etching of the remaining sapphire layer to expose the n-GaN contact layer.
  • Adoption of a sapphire-face-up structure for vertical current conduction.

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Main Results:

  • The proposed vertical LEDs exhibit a sapphire-face-up structure and vertical conduction.
  • Improved light-extraction efficiency due to the use of PSS.
  • Higher light output power and reduced power degradation at high driving currents compared to conventional lateral LEDs.

Conclusions:

  • Vertical InGaN LEDs fabricated with PSS and thinning techniques offer enhanced performance.
  • The vertical structure provides superior heat dissipation, similar to flip-chip designs.
  • This approach presents a promising alternative for high-power and efficient LED applications.