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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes.

A Armstrong¹, T A Henry, D D Koleske

¹Sandia National Laboratories, Albuquerque, New Mexico 87185, USA. aarmstr@sandia.gov

|November 29, 2012

Summary

Researchers investigated deep level defects in InGaN/GaN light emitting diodes (LEDs). Defect states in InGaN quantum wells and GaN barriers were distinguished, revealing depth-dependent concentrations linked to evolving growth mechanisms.

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3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry

Published on: April 29, 2020

Area of Science:

Materials Science
Semiconductor Physics
Optoelectronics

Background:

Deep level defects in InGaN/GaN multi-quantum wells (MQWs) significantly impact light emitting diode (LED) performance.
Understanding defect origins and distribution is crucial for improving LED efficiency and reliability.

Purpose of the Study:

To investigate deep level defects within the MQW region of InGaN/GaN LEDs.
To distinguish between defect states in InGaN quantum wells and GaN quantum barriers.
To analyze the depth-dependent concentration of defects and their implications for LED performance.

Main Methods:

Bias-dependent steady-state photocapacitance.
Deep level optical spectroscopy.
Capacitance-voltage (C-V) measurements for nanoscale depth profiling.

Main Results:

Distinct defect states were identified in both InGaN quantum wells and GaN quantum barriers.
Deep level concentrations varied significantly with depth across the MQW region.
Evidence suggests evolving defect incorporation mechanisms during the MQW growth process.

Conclusions:

The study successfully differentiated defect types and mapped their distribution within the InGaN/GaN MQW structure.
Depth-dependent defect concentrations highlight the dynamic nature of defect formation during epitaxial growth.
Findings provide critical insights for optimizing LED fabrication processes to minimize performance-limiting defects.