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Updated: May 16, 2026
In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells
Published on: October 3, 2018
Observation of unusual optical transitions in thin-film Cu(In,Ga)Se2 solar cells
Yu-Kuang Liao1, Shou-Yi Kuo, Woei-Tyng Lin
1Department of Electro-Physics, National Chiao-Tung University, Hsinchu, Taiwan.
Abstract:
In this paper, we examine photoluminescence spectra of Cu(In,Ga)Se(2) (CIGS) via temperature-dependent and power-dependent photoluminescence (PL). Donor-acceptor pair (DAP) transition, near-band-edge transition were identified by their activation energies. S-shaped displacement of peak position was observed and was attributed to carrier confinement caused by potential fluctuation. This coincides well with the obtained activation energy at low temperature. We also present a model for transition from V(Se) to V(In) and to V(Cu) which illustrates competing mechanisms between DAPs recombinations.
