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Updated: May 16, 2026

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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
Power-efficient III-V/silicon external cavity DBR lasers
A J Zilkie1, P Seddighian, B J Bijlani
1Kotura Inc., 2630 Corporate Place, Monterey Park, California 91754, USA. azilkie@kotura.com
Optics Express
|November 29, 2012
Abstract:
We report the design and characterization of external-cavity DBR lasers built with a III-V-semiconductor reflective-SOA with spot-size converter edge-coupled to SOI waveguides containing Bragg grating mirrors. The un-cooled lasers have wall-plug-efficiencies of up to 9.5% at powers of 6 mW. The lasers are suitable for making power efficient, hybrid WDM transmitters in a CMOS-compatible SOI optical platform.
