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Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators
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Guided-mode quantum efficiency: a novel optoelectronic characterization technique.

D M N M Dissanayake1, A Ashraf, Y Pang

  • 1Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973, USA.

The Review of Scientific Instruments
|December 5, 2012
PubMed
Summary
This summary is machine-generated.

We developed a new technique to measure light trapping and charge generation in optoelectronic devices. This method quantifies guided-mode internal quantum efficiency (GIQE) for improved device design and analysis.

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Physics

Background:

  • Characterizing light trapping and charge dynamics is crucial for optimizing thin-film optoelectronic devices.
  • Existing methods often lack the resolution to analyze individual light propagation modes within devices.

Purpose of the Study:

  • To introduce a novel optoelectronic characterization technique for quantifying light trapping and charge generation/extraction.
  • To define and measure guided-mode internal quantum efficiency (GIQE) for multilayer thin-film devices.
  • To enable detailed analysis of light absorption and charge carrier behavior within specific device layers.

Main Methods:

  • Selective evanescent coupling of light into guided modes of the device.
  • Measurement of photogenerated current for each guided mode.
  • Computational modeling of electromagnetic field distribution.
  • Calculation of guided-mode internal quantum efficiency (GIQE).

Main Results:

  • Demonstration of a technique to quantify light trapping and photoinduced charge generation and extraction.
  • Definition and measurement of GIQE, analogous to internal quantum efficiency but for guided modes.
  • Separation of photoactive layer absorption from parasitic absorption using electromagnetic field modeling.
  • Insight into spatial distributions of charge carrier extraction and material properties.

Conclusions:

  • The developed technique allows for precise quantification of light-matter interactions in optoelectronic devices.
  • GIQE measurement and complementary modeling facilitate improved device design and optimization, particularly for waveguiding photovoltaics.
  • The technique provides valuable insights into charge carrier dynamics and material quality within the photoactive layer.