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Updated: May 16, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Complementary logic gate arrays based on carbon nanotube network transistors
Pingqi Gao1, Jianping Zou, Hong Li
1NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
Abstract:
An efficient technique of fabricating high performance n- and p- type single-walled carbon nanotube (SWNT) network field-effect transistors (NET-FETs) is successfully demonstrated. Complementary inverters, NOR, NAND, OR, AND logic gates have been achieved from integrating these p- and n-type SWNT-NET-FETs. The processing technique described here is fully compatible with conventional silicon microelectronic technologies and it is readily suitable for scalable integration.
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