Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: May 16, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

High-performance transistors based on zinc tin oxides by single spin-coating process.

Yunlong Zhao1, Lian Duan, Guifang Dong

  • 1Key Lab of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, PR China.

Langmuir : the ACS Journal of Surfaces and Colloids
|December 6, 2012
PubMed
Summary

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Attenuated <i>Salmonella</i> Carrying IL-21 Expression Plasmid Enhances the Efficacy of Radiotherapy for Hepatocellular Carcinoma.

Journal of drug targeting·2026
Same author

Digitally delivered cognitive bias modification for interpretation targeting hostile interpretation bias in compulsory drug rehabilitation: A feasibility randomized trial.

Psychiatry research·2026
Same author

In Situ Synthesis of Rapid Hemostatic Zeolite/Gauze Composites on Pre-Seeded Gauze.

ACS applied bio materials·2026
Same author

Mapping structural variants in Populus tomentosa reveals adaptive signatures and improves prediction of wood properties.

Nature communications·2026
Same author

Natural variation in <i>PtoCPK3</i> governs drought tolerance by orchestrating xylem remodeling and lignin metabolism in <i>Populus</i>.

Science advances·2026
Same author

A MITE-mediated Cis-regulatory module regulates PsiGCN2 expression for high-intensity light acclimation in Populus simonii.

Plant physiology·2026

Solution-processed zinc tin oxide (ZTO) films were used to create high-performance thin-film transistors. These transistors achieved high mobility and an excellent on-to-off current ratio, demonstrating ZTO

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Semiconductor Physics

Background:

  • Thin-film transistors (TFTs) are crucial for electronic devices.
  • Developing high-performance, solution-processed TFTs is an active research area.
  • Zinc tin oxide (ZTO) is a promising semiconductor material for TFTs.

Purpose of the Study:

  • To investigate the nonhomogeneity of solution-processed zinc tin oxide (ZTO) films.
  • To understand the impact of ZTO film-substrate interaction and surface crystallization on device performance.
  • To fabricate and optimize ZTO-based thin-film transistors (TFTs) for high performance.

Main Methods:

  • Solution processing of zinc acetate dehydrate and tin(II) 2-ethylhexanoate in 2-methoxyethanol to form ZTO films.

More Related Videos

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Related Experiment Videos

Last Updated: May 16, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

  • Fabrication of bottom-contact thin-film transistors using ZTO and solution-processed aluminum oxide gate insulator.
  • Analysis of ZTO film nonhomogeneity, including film-substrate interaction and surface crystallization.

    • Main Results:

    • Single-layer ZTO films exhibited nonhomogeneity due to film-substrate interaction and surface crystallization.
    • A Sn-rich ZTO layer in a bottom-contact TFT configuration yielded high performance.
    • Achieved a high saturation mobility of 78.9 cm(2) V(-1) s(-1).
    • Obtained an on-to-off current ratio of 10(5) and a threshold gate voltage of 1.6 V.

    Conclusions:

    • Controlling ZTO film nonhomogeneity is essential for high-performance TFTs.
    • Solution-processed ZTO TFTs offer a viable pathway for advanced electronic applications.
    • The developed fabrication method demonstrates potential for efficient and high-performing electronic devices.