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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Related Experiment Video

Updated: May 16, 2026

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

Silicon p-i-n junction fibers.

Rongrui He¹, Todd D Day, Mahesh Krishnamurthi

¹Department of Chemistry and Materials, Research Institute, Pennsylvania State University, University Park, PA 16802, USA.

Advanced Materials (Deerfield Beach, Fla.)

|December 6, 2012

Summary

Flexible silicon (Si) p-i-n junction fibers were fabricated, enabling advancements in textile photovoltaics and optoelectronics. These fibers demonstrate promising photovoltaic properties, high-speed photodetection, and light-guiding capabilities.

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Area of Science:

Materials Science
Optoelectronics
Renewable Energy

Background:

Flexible electronics are gaining traction for wearable applications.
Textile-integrated devices require adaptable and robust components.
Photovoltaic and optoelectronic functionalities in fiber form are highly desirable.

Purpose of the Study:

To develop flexible silicon p-i-n junction fibers.
To explore their potential in textile photovoltaics and optoelectronics.
To characterize their photovoltaic, photodetection, and light-guiding properties.

Main Methods:

High pressure chemical vapor deposition (HP-CVD) was employed for fiber fabrication.
Fabricated fibers were characterized for their structural and optoelectronic properties.
Photovoltaic performance, photodetection bandwidth, and light-guiding capabilities were assessed.

Main Results:

Successfully fabricated flexible Si p-i-n junction fibers.
Demonstrated significant photovoltaic properties.
Achieved gigahertz bandwidth for photodetection.
Confirmed the ability of fibers to waveguide light.

Conclusions:

Flexible Si p-i-n junction fibers are a viable technology for textile photovoltaics.
These fibers offer a versatile platform for optoelectronic applications.
The demonstrated properties open new avenues for integrated wearable devices.