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Updated: May 16, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Direct observation of a pressure-induced precursor lattice in silicon
Guoyin Shen1, Daijo Ikuta, Stanislav Sinogeikin
1High Pressure Collaborative Access Team, Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439, USA. gshen@ciw.edu
Abstract:
Detailed knowledge of atomic-scale structural change is essential for understanding the process and mechanism of phase transitions in solids. We present the direct experimental evidence of a precursor lattice in silicon at high pressures. The precursor lattice may appear to coexist dynamically with the host lattice over a large pressure range through rapid lattice fluctuations. The first-principles calculations are used to elucidate a dynamic lattice-fluctuation mechanism that accounts for the experimental observations. This precursor lattice-fluctuation mechanism for the phase transition goes beyond previously considered reconstructive or displacive processes and provides a novel picture of the underlying dynamics.

