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Updated: May 16, 2026

Measurements of Long-range Electronic Correlations During Femtosecond Diffraction Experiments Performed on Nanocrystals of Buckminsterfullerene
Published on: August 22, 2017
Bulk electronic structure of quasicrystals
J Nayak1, M Maniraj, Abhishek Rai
1UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452001, India.
Hard x-ray photoemission confirms a pseudogap in quasicrystalline solids, resolving debates about their formation mechanism. This electronic structure feature is crucial for understanding their unique properties.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid-State Chemistry
Background:
- Quasicrystalline solids exhibit unique atomic structures and electronic properties.
- The existence and nature of a pseudogap at the Fermi level in quasicrystals remain a subject of debate.
- Surface-sensitive techniques may not accurately represent the bulk electronic structure.
Purpose of the Study:
- To resolve the controversy surrounding the pseudogap's existence in quasicrystalline solids.
- To investigate the mechanism of quasicrystal formation by examining their electronic structure.
- To compare the electronic properties of different quasicrystalline alloys.
Main Methods:
- Hard x-ray photoemission spectroscopy (HAXPES) was employed.
- The study focused on icosahedral fivefold Al-Pd-Mn and Al-Cu-Fe quasicrystals.
- Results were compared with surface-sensitive low energy photoemission data.
Main Results:
- HAXPES data confirmed the presence of a pseudogap at the Fermi level in both Al-Pd-Mn and Al-Cu-Fe quasicrystals.
- Low energy photoemission failed to detect the pseudogap due to surface metallic phases.
- In Al-Cu-Fe, the pseudogap was fully formed, indicating proximity to a metal-insulator transition.
Conclusions:
- The study provides definitive evidence for the pseudogap in quasicrystals using bulk-sensitive HAXPES.
- The findings clarify the electronic structure and formation mechanism of quasicrystalline solids.
- Al-Cu-Fe quasicrystals are closer to the metal-insulator phase boundary than Al-Pd-Mn.
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