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Electric field-induced hole transport in copper(I) thiocyanate (CuSCN) thin-films processed from solution at room
Pichaya Pattanasattayavong1, Guy Olivier Ngongang Ndjawa, Kui Zhao
1Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, UK.
Abstract:
The optical, structural and charge transport properties of solution-processed films of copper(I) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ~20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01-0.1 cm(2) V(-1) s(-1).
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