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Step free energies at faceted solid-liquid interfaces from equilibrium molecular dynamics simulations
1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
This study introduces a new atomistic simulation method to calculate step free energies for solid-liquid interfaces. The method successfully determined the step free energy for silicon, aiding future research in crystal growth and alloy casting.
Area of Science:
- Materials Science
- Computational Physics
- Chemical Engineering
Background:
- Calculating step free energies is crucial for understanding crystal growth mechanisms.
- Faceted solid-liquid interfaces present unique challenges for atomistic simulations.
Purpose of the Study:
- To develop and demonstrate a novel method for computing step free energies of faceted solid-liquid interfaces.
- To apply this method to (111) interfaces in elemental silicon using atomistic simulations.
Main Methods:
- Utilized an adiabatic trapping procedure with atomistic simulations.
- Simulated coexisting solid and liquid phases with faceted interfaces of varying island sizes.
- Computed equilibrium temperatures and fitted simulation data using classical nucleation theory.
Main Results:
- The calculated coexistence temperature is significantly influenced by interface geometry.
- Island radius was found to be inversely proportional to superheating.
- The step free energy for silicon was determined to be γ(st) = 0.103 ± 0.005 × 10⁻¹⁰ J/m.
Conclusions:
- The proposed method enables the calculation of step free energies for faceted crystals.
- This approach is applicable to nanowire growth (e.g., vapor-liquid-solid mechanism) and alloy casting.
- The Stillinger-Weber potential for Si favors wurtzite over diamond-cubic structures at low undercoolings.
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