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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Structural stability and electronic properties of sp3 type silicon nanotubes
Alon Hever1, Jonathan Bernstein, Oded Hod
1Department of Chemical Physics, School of Chemistry, The Sackler Faculty of Exact Sciences, Tel-Aviv University, Tel-Aviv 69978, Israel.
Abstract:
A density functional theory study of the structural and electronic properties and relative stability of narrow hydrogen passivated sp(3) silicon nanotubes of different growth orientations is presented. All nanotubes studied and their corresponding wire structures are found to be meta-stable with the wires being more energetically stable. Silicon nanotubes show a dramatic bandgap increase of up to 68% with respect to the corresponding wires. Furthermore, a direct relation between the bandgap of the system and the molar fraction of the passivating hydrogen contents is found. These results suggest that by careful control over their crystallographic growth orientation, dimensions, and chemical composition it should be possible to design and fabricate silicon nanotubes with desired electronic properties.
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