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CMOS-MEMS test-key for extracting wafer-level mechanical properties.

Wan-Chun Chuang1, Yuh-Chung Hu, Pei-Zen Chang

  • 1Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan. wcchuang@mail.nsysu.edu.tw

Sensors (Basel, Switzerland)
|December 14, 2012
PubMed
Summary

This study presents a new algorithm to determine the mechanical properties of CMOS-MEMS devices by analyzing electrical behavior. This non-destructive method enables accurate material characterization for micro-device manufacturing.

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Area of Science:

  • Materials Science
  • Mechanical Engineering
  • Electrical Engineering

Background:

  • Characterizing mechanical properties of CMOS-MEMS is crucial for device performance and reliability.
  • Existing methods can be destructive or complex, limiting wafer-level applications.
  • Accurate measurement of Young's modulus and stress is essential for micro-device design and fabrication.

Purpose of the Study:

  • To develop a robust algorithm for extracting mechanical properties of CMOS-MEMS devices.
  • To enable non-destructive, wafer-level characterization of micro-devices.
  • To validate the algorithm using experimental data and analyze its robustness.

Main Methods:

  • Derivation of an approximate analytical solution for pull-in voltage using Euler's beam model and minimum energy method.

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  • Utilizing the closed-form pull-in voltage solution to extract Young's modulus and mean stress.
  • Testing the algorithm on CMOS-MEMS test-keys fabricated via a standard CMOS process and comparing with existing literature.

    • Main Results:

    • A robust algorithm for extracting Young's modulus and mean stress from electrical behavior was successfully developed.
    • The algorithm demonstrated validity through test cases and comparison with experimental results.
    • Analysis confirmed the algorithm's robustness concerning test-key dimension variations.

    Conclusions:

    • The developed algorithm provides an effective, non-destructive method for mechanical characterization of CMOS-MEMS.
    • This technique is compatible with wafer-level testing in micro-device manufacturing and the IC industry.
    • The method offers a reliable approach for obtaining critical material properties for micro-fabrication.