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High on/off ratio field effect transistors based on exfoliated crystalline SnS2 nano-membranes
Debtanu De1, John Manongdo, Sean See
1Department of Physics and the Texas Center for Superconductivity, University of Houston, Houston, TX 77204, USA.
Abstract:
We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS(2), which exhibit an on/off ratio exceeding 2 × 10(6) and a carrier mobility of ∼1 cm(2) V(-1) s(-1). The results demonstrate the great potential of SnS(2), a layered semiconductor with finite band gap, as the building block for future nanoelectronic applications complementary to graphene-based materials with zero or small band gaps.
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