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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Characteristics of MOSFET01:17

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Metal-Semiconductor Junctions01:24

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Related Experiment Video

Updated: May 16, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

High performance multilayer MoS2 transistors with scandium contacts.

Saptarshi Das1, Hong-Yan Chen, Ashish Verma Penumatcha

  • 1Birck Nanotechnology Center & Department of ECE, Purdue University, West Lafayette, Indiana, USA.

Nano Letters
|December 18, 2012
PubMed
Summary

Researchers achieved high electronic performance in molybdenum disulfide (MoS2) by optimizing source/drain contacts. This work clarifies misconceptions about Ohmic contacts, enabling better device design for 2-D materials.

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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Last Updated: May 16, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Growing interest in two-dimensional (2-D) crystals beyond graphene for electronic applications.
  • Limited understanding of the performance potential of these 2-D materials, particularly concerning contacts.

Purpose of the Study:

  • To investigate and optimize source/drain contacts for two-dimensional (2-D) molybdenum disulfide (MoS2) field-effect transistors.
  • To elucidate the role of contact resistance in limiting device performance and address misconceptions about Ohmic contacts.

Main Methods:

  • Fabrication of MoS2 field-effect transistors using exfoliated MoS2 flakes.
  • Application of scandium (Sc) as source/drain contacts on 10-nm-thick MoS2.
  • Deposition of a 15-nm Al2O3 passivation layer.
  • Electrical characterization at room temperature to determine effective mobilities.

Main Results:

  • Achieved high effective mobilities of 700 cm²/Vs at room temperature.
  • Demonstrated successful elimination of previously unrecognized contact resistance effects.
  • Identified and clarified misconceptions regarding the apparent Ohmic behavior of contacts.

Conclusions:

  • Proper understanding and design of contacts are crucial for harnessing the intrinsic properties of 2-D MoS2.
  • Scandium contacts on thin MoS2 flakes, when properly passivated, significantly enhance device performance.
  • The study provides a pathway for realizing high-performance 2-D electronic devices by addressing contact limitations.