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Fabrication and centeracterization of ordered CuIn(1-x)GaxSe2 nanopore films via template-based electrodeposition
Ming Li1, Maojun Zheng, Tao Zhou
1Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China. mjzheng@sjtu.edu.cn.
Abstract:
Ordered CuIn(1-x)GaxSe2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photoelectrochemical water splitting.
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