Nondestructive and nonpreparative chemical nanometrology of internal material interfaces at tunable high information...

Improvement in the performance of functional nanoscaled devices involves novel materials, more complex structures, and advanced technological processes. The transitions to heavier elements and to thicker layers restrict access to the chemical and physical characterization of the internal material interfaces. Conventional nondestructive characterization techniques such as X-ray photoelectron spectroscopy suffer from sensitivity and quantification restrictions whereas destructive techniques such as ion mass spectrometry may modify the chemical properties of internal interfaces. Thus, novel methods providing sufficient sensitivity, reliable quantification, and high information depths to reveal interfacial parameters are needed for R&D challenges on the nanoscale. Measurement strategies adapted to nanoscaled samples enable the combination of Near-Edge X-ray Absorption Fine Structure and Grazing Incidence X-ray Fluorescence to allow for chemical nanometrology of internal material interfaces. Their validation has been performed at nanolayered model structures consisting of a silicon substrate, a physically vapor deposited Ni metal layer, and, on top, a chemically vapor deposited B(x)C(y)N(z) light element layer.