Contactless surface conductivity mapping of graphene oxide thin films deposited on glass with scanning electrochemical microscopy
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Updated: May 15, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Joel Azevedo1, Céline Bourdillon, Vincent Derycke
1CEA, IRAMIS, Service de Physique de l'Etat Condensé, Laboratoire d'Electronique Moléculaire, F-91191 Gif sur Yvette, France.
Abstract:
The present article introduces a rapid, very sensitive, contactless method to measure the local surface conductivity with Scanning Electrochemical Microscopy (SECM) and obtain conductivity maps of heterogeneous substrates. It is demonstrated through the study of Graphene Oxide (GO) thin films deposited on glass. The adopted substrate preparation method leads to conductivity disparities randomly distributed over approximately 100 μm large zones. Data interpretation is based on an equation system with the dimensionless conductivity as the only unknown parameter. A detailed prospection provides a consistent theoretical framework for the reliable quantification of the conductivity of GO with SECM. Finally, an analytical approximation of the conductivity as a function of the feedback current is proposed, making any further interpretation procedure straightforward, as it does not require iterative numerical simulations any more. The present work thus provides not only valuable information on the kinetics of GO reduction in mild conditions but also a general and simplified interpretation framework that can be extended to the quantitative conductivity mapping of other types of substrates.
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