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Short-channel transistors constructed with solution-processed carbon nanotubes.

Sung-Jin Choi1, Patrick Bennett, Kuniharu Takei

  • 1Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.

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Solution-processed single-walled carbon nanotubes (SWNTs) enable high-performance, ultrascaled transistors. Oxygen treatment reduces contact resistance, achieving performance comparable to CVD nanotubes for future electronics.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrical Engineering

Background:

  • Ultrascaled transistors are crucial for high-performance electronic applications.
  • Contact resistance between nanotubes and electrodes often limits transistor performance.
  • Solution-processed single-walled carbon nanotubes (SWNTs) offer a potential fabrication route.

Purpose of the Study:

  • To evaluate the feasibility of solution-processed SWNTs for high-performance transistor applications.
  • To investigate methods for reducing contact resistance in SWNT transistors.
  • To develop aggressively scaled SWNT transistors with competitive performance.

Main Methods:

  • Fabrication of short-channel transistors using solution-processed SWNTs.
  • Implementation of a top-gate structure with high-dielectric-constant ZrO(2) gate insulators.
  • Application of oxygen treatment to modify electrical contact properties.

Main Results:

  • Solution-processed SWNTs exhibited lower intrinsic field-effect mobility compared to CVD nanotubes.
  • Electrical contact resistance was not significantly affected by intrinsic mobility differences.
  • Oxygen treatment effectively lowered contact resistance.
  • High-performance transistors with a 15 nm channel length were achieved.

Conclusions:

  • Solution-processed SWNTs, when optimized, can achieve performance comparable to CVD nanotube transistors.
  • Oxygen treatment is a viable strategy to mitigate contact resistance issues.
  • These findings highlight the potential of solution-processed SWNTs for future aggressively scaled transistor technologies.